MRF6S21050LR3 Datasheet - Freescale Semiconductor

MRF6S21050LR3 RF Power Field Effect Transistors

Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi.

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Vol.

MRF6S21050LR3 Features

* dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W

* CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3

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* 30 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOU

MRF6S21050LR3_FreescaleSemiconductor.pdf