* dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W
* CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3
* 25
* 30 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOU
MRF6S21050LR3 Datasheet (582.26 KB)
MRF6S21050LR3
Freescale Semiconductor
582.26 KB
Rf power field effect transistors.
www.DataSheet4U.com
Freescale Semiconductor Technical Data
MRF6S21050L Rev. 0, 3/2005
RF Power Field Effect Transistors
N - Channel Enhancement - .
📁 Related Datasheet
MRF6S21050LSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100NR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21140HR3 RF Power FET (NXP)
MRF6S21140HSR3 RF Power FET (NXP)
MRF6S20010GNR1 RF Power Field Effect Transistors (Freescale Semiconductor)
