MRF6S21050LR3 - RF Power Field Effect Transistors
Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev.
0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - carrier W - CDMA Performance: VDD = 28 Vol
MRF6S21050LR3 Features
* dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W
* CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3
* 25
* 30 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOU
