MRF6S21050LR3 Datasheet, Transistors, Freescale Semiconductor

MRF6S21050LR3 Features

• Transistors er Gain and Drain Efficiency versus CW Output Power MRF6S21050LR3 MRF6S21050LSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 450 mA, f1 = 21

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Part number:

MRF6S21050LR3

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Freescale Semiconductor

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582.26kb

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📄 Datasheet

Description:

Rf power field effect transistors. Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Cap

MRF6S21050LR3 Application

• Applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a

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MRF6S21050LR3

Freescale Semiconductor

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