MRF6S9060MBR1, MRF6S9060MR1 RF Power Field Effect Transistors

NXP

MRF6S9060MBR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1.There are no form, fit or function chan.

MRF6S9060MBR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pou

📥 Download Datasheet

MRF6S9060MBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S9060MBR1, MRF6S9060MR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S9060MBR1, MRF6S9060MR1
Manufacturer: NXP ↗
File Size: 677.54 KB
Datasheet: MRF6S9060MR1-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S9060MBR1, MRF6S9060MR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors NXP

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