MRF6S9060 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S9060, RF Power Field Effect Transistors

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Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev.

1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD =

MRF6S9060 Features

* . Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, I