Datasheet Specifications
- Part number
- MRF6S9060
- Manufacturer
- Freescale Semiconductor
- File Size
- 533.32 KB
- Datasheet
- MRF6S9060_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev.1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.
Features
* . Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, IApplications
* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.MRF6S9060 Distributors
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