MRF6S9060 Datasheet - Freescale Semiconductor

MRF6S9060, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev.1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.
95F786 95F787 100B470JP500X 44F3360 100B3R0JP500X 100B150JP500X 93F2975 51F2913 100B130JP500X 100B3R9JP500X 700A561MP150X 95F4579 A04T - 5 05F1545 84N.

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Datasheet Details

Part number:

MRF6S9060

Manufacturer:

Freescale Semiconductor

File Size:

533.32 KB

Description:

RF Power Field Effect Transistors

Features

* . Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, I

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pou

MRF6S9060 Distributors

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MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1 MRF6S21140HR3 MRF6S21140HSR3

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MRF6S9060 Power Field Effect Transistors Freescale Semiconductor

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