MRF6S9125NBR1
MRF6S9125NBR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF6S9125MBR1 comparator family.
- Part of the MRF6S9125MBR1 comparator family.
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Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment. N
- CDMA Application
- Typical Single
- Carrier N
- CDMA Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 27 Watt Avg., Full Frequency Band (865
- 895 MHz), IS
- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain
- 20.2 d B Drain Efficiency
- 31% ACPR @ 750 k Hz Offset =
- 47.1 d Bc @ 30 k Hz Bandwidth GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 60 Watts Avg., Full Frequency Band (865
- 895 MHz or 921
- 960 MHz) Power Gain
- 20 d B Drain Efficiency
- 40% (Typ) Spectral Regrowth @ 400 k Hz Offset =
- 63 d Bc Spectral Regrowth @ 600 k Hz Offset =
- 78 d Bc EVM
- 1.5% rms GSM Application
- Typical GSM Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 125 Watts, Full Frequency Band (921
- 960 MHz) Power Gain
- 19 d B Drain Efficiency
-...
