MRF6S9125NR1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. N - CDMA Application - Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 20.2 d B Drain Efficiency - 31% ACPR @ 750 k Hz Offset = - 47.1 d Bc @ 30 k Hz Bandwidth GSM EDGE Application - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 60 Watts Avg., Full Frequency Band (865 - 895 MHz or 921 - 960 MHz) Power Gain - 20 d B Drain Efficiency - 40% (Typ) Spectral Regrowth @ 400 k Hz Offset = - 63 d Bc Spectral Regrowth @ 600 k Hz Offset = - 78 d Bc EVM - 1.5% rms GSM Application - Typical GSM Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain - 19 d B Drain Efficiency -...