MRF6S9130HSR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. - Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 m A, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 19.2 d B Drain Efficiency - 30.5% ACPR @ 750 k Hz Offset - - 48.1 d Bc in 30 k Hz Bandwidth GSM Application - Typical GSM Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 130 Watts, Full Frequency Band (921 - 960 MHz) Power Gain - 18 d B Drain Efficiency - 63% GSM EDGE Application - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 56 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain - 18.5 d B Drain Efficiency - 44% Spectral Regrowth @ 400 k Hz Offset = - 63 d Bc Spectral Regrowth @ 600 k Hz Offset = - 75 d Bc EVM - 1.5% rms - Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW Output Power Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of...