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MRF6S9130HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: .. Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 130 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 18 dB Drain Efficiency — 63% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 56 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 18.5 dB Drain Efficiency — 44% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage T.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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MRF6S9130HSR3 Distributor