MRF6V12500GS - RF Power LDMOS Transistors
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal
MRF6V12500GS Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation D
