* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for I
MRF6V10250HSR3 Datasheet (400.00 KB)
MRF6V10250HSR3
Freescale Semiconductor
400.00 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF6V10250HS Rev. 0, 2/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode.
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