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MRF6V10250HSR3 Datasheet - Freescale Semiconductor

MRF6V10250HSR3 - RF Power Field Effect Transistor

240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 Ω, 1/4 W Chip Resistor 20 Ω, 1 W Chip Resistor Part Number

Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev.

0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle.

This device is suitable for use in pulsed applications.

Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain <

MRF6V10250HSR3 Features

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* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for I

MRF6V10250HSR3_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF6V10250HSR3

Manufacturer:

Freescale Semiconductor

File Size:

400.00 KB

Description:

Rf power field effect transistor.

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