MRF6V10250HSR3 - RF Power Field Effect Transistor
240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 Ω, 1/4 W Chip Resistor 20 Ω, 1 W Chip Resistor Part Number
Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev.
0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle.
This device is suitable for use in pulsed applications.
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain <
MRF6V10250HSR3 Features
* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for I
