MRF6V10250HSR3 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF6V10250HSR3 Datasheet Preview — Preview of MRF6V10250HSR3 PDF

Datasheet Details

Part number	MRF6V10250HSR3
Manufacturer	Freescale Semiconductor
File Size	400.00 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6V10250HSR3_FreescaleSemiconductor.pdf

MRF6V10250HSR3 Product details

Description

240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 Ω, 1/4 W Chip Resistor 20 Ω, 1 W Chip Resistor Part Number ATC100B241JT500XT ATC100B1R8CT500XT ATC100B3R3CT500XT ATC100B5R1CT500XT ATC100B390JT500XT C1825C225J5RAC ATC100B4R7CT500XT EKME633ELL471MK25S A02TKLC 2T, 18awg CRCW120610R0FKEA CRCW251220R0FKEA Manuf

Features

www. DataSheet4U. com.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6V10250HSR3 1090 MHz, 250 W, 50 V PULSED.

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Published: Nov 30, 2008 |