MRF6V10250HSR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev.0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode.
240 pF Chip Capacitor 1.

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Datasheet Specifications

Part number: MRF6V10250HSR3
Manufacturer: Freescale Semiconductor
File Size: 400.00 KB
Datasheet: MRF6V10250HSR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* www. DataSheet4U. com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for I

Applications

* operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain
* 21

MRF6V10250HSR3 Distributors

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MRF6V10250HSR3 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF6V10250HSR3-like datasheet