MRF6V12500HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev.0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channe.
5.

📥 Download Datasheet

MRF6V12500HR3 Datasheet Preview — Preview of MRF6V12500HR3 PDF

Datasheet Specifications

Part number: MRF6V12500HR3
Manufacturer: Freescale Semiconductor
File Size: 447.30 KB
Datasheet: MRF6V12500HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Oper

Applications

* operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg. ), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain
* 19.7 dB Dra

MRF6V12500HR3 Distributors

📁 Related Datasheet

MRF6V12500H MRF6V12500HS MRF6V12500GS MRF6V14300HR3 MRF6V14300HSR3 MRF6V2010GN

📌 All Tags

MRF6V12500HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6V12500HR3-like datasheet