MRF6V12500H - RF Power LDMOS Transistors

NXP

Datasheet Details

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS.

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Published: May 5, 2020 |