MRF6V14300HSR3, MRF6V14300HR3 RF Power Field Effect Transistors

Motorola

Description

Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev.2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mod.
43 pF Chip Capacitor 18 pF Chip Capacitor 33 pF Chip Capacitor 27 pF Chip Capacitor 2.

📥 Download Datasheet

MRF6V14300HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MRF6V14300HSR3, MRF6V14300HR3
Manufacturer: Motorola
File Size: 439.03 KB
Datasheet: MRF6V14300HR3_Motorola.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3.
Please refer to the document for exact specifications by model.

Features

* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate

Applications

* operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg. ), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power G

MRF6V14300HSR3 Distributors

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MRF6V14300HR3 Power Field Effect Transistors Motorola

Motorola MRF6V14300HSR3-like datasheet