* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate
MRF6V14300HSR3 Datasheet (439.03 KB)
MRF6V14300HSR3
Motorola
439.03 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6V14300H Rev. 2, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mod.
📁 Related Datasheet
MRF6V14300HSR3 RF Power Field Effect Transistors (NXP)
MRF6V14300HR3 RF Power Field Effect Transistors (Motorola)
MRF6V14300HR3 RF Power Field Effect Transistors (NXP)
MRF6V10250HSR3 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V12500GS RF Power LDMOS Transistors (NXP)
MRF6V12500H RF Power LDMOS Transistors (NXP)
MRF6V12500HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V12500HS RF Power LDMOS Transistors (NXP)
MRF6V12500HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
