Datasheet Details
Part number:
MRF6V14300HSR3, MRF6V14300HR3
Manufacturer:
Motorola
File Size:
439.03 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3.
Please refer to the document for exact specifications by model.
MRF6V14300HSR3, MRF6V14300HR3, RF Power Field Effect Transistors
43 pF Chip Capacitor 18 pF Chip Capacitor 33 pF Chip Capacitor 27 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 330 pF, 63 V Electrolytic Capacitor 0.1 μF, 35 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 10 Ω, 1/4 W Chip Resistor Part Number ATC100B430JT500XT
Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev.
2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle.
These devices are suitable for use in pulsed applications.
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycl
MRF6V14300HSR3 Features
* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate
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