Datasheet Specifications
- Part number
- MRF6V14300HR3
- Manufacturer
- Motorola
- File Size
- 439.03 KB
- Datasheet
- MRF6V14300HR3_Motorola.pdf
- Description
- RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev.2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mod.
Features
* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative GateApplications
* operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.MRF6V14300HR3 Distributors
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