* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate
MRF6V14300HR3 Datasheet (439.03 KB)
MRF6V14300HR3
Motorola
439.03 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6V14300H Rev. 2, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mod.
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