MRF6V13250HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev.0, 6/2011 RF Power Field Effect Transistors N *Channel Enhancement<.
22 μF, 35 V Tantalum Capacitors 0.

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Datasheet Specifications

Part number: MRF6V13250HR3
Manufacturer: Freescale Semiconductor
File Size: 880.84 KB
Datasheet: MRF6V13250HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 20 V to 50 V for Extended Power Range
* Integrated ESD Protection

Applications

* operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB)
* 18 MRF6V13250HR3 MRF6V13250HS

MRF6V13250HR3 Distributors

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MRF6V13250HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6V13250HR3-like datasheet