MRF6V13250HR3 - RF Power Field Effect Transistors
22 μF, 35 V Tantalum Capacitors 0.1 μF, 50 V Chip Capacitors 100 pF Chip Capacitors 4.7 pF Chip Capacitor 1000 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 15 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.50 Part Number T491X226K035AT CDR33BX104AKWS
Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev.
0, 6/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB) 18
MRF6V13250HR3 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 20 V to 50 V for Extended Power Range
* Integrated ESD Protection
