MRF6V2010NR1, MRF6V2010NBR1 Datasheet - Freescale Semiconductor

MRF6V2010NR1 RF Power Field Effect Transistor

95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Elect.

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain 23.9 dB Drain Efficie.

MRF6V2010NR1 Features

* Integrated ESD Protection

* Excellent Thermal Stability

* Facilitates Manual Gain Control, ALC and Modulation Techniques

* 200°C Capable Plastic Package

* RoHS Compliant

* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

MRF6V2010NBR1_FreescaleSemiconductor.pdf

MRF6V2010NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V2010NR1, MRF6V2010NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6V2010NR1, MRF6V2010NBR1

Manufacturer:

Freescale Semiconductor

File Size:

1.62 MB

Description:

Rf power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: MRF6V2010NR1, MRF6V2010NBR1.
Please refer to the document for exact specifications by model.

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MRF6V2010NR1 MRF6V2010NBR1 Power Field Effect Transistor Freescale Semiconductor

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