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MRF6V2010NR1

RF Power Field Effect Transistor

MRF6V2010NR1 Features

* Integrated ESD Protection

* Excellent Thermal Stability

* Facilitates Manual Gain Control, ALC and Modulation Techniques

* 200°C Capable Plastic Package

* RoHS Compliant

* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

MRF6V2010NR1 General Description

95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Elect.

MRF6V2010NR1 Datasheet (1.62 MB)

Preview of MRF6V2010NR1 PDF

Datasheet Details

Part number:

MRF6V2010NR1

Manufacturer:

Freescale Semiconductor

File Size:

1.62 MB

Description:

Rf power field effect transistor.
Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode L.

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MRF6V2010NR1 Power Field Effect Transistor Freescale Semiconductor

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