* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Excellent Thermal Stability
* Facilitates Manual Gain Control, ALC and Modulation Techniques
* 225°C Capable Plastic Package
* RoHS Compliant M
MRF6V2300N Datasheet (350.20 KB)
MRF6V2300N
Motorola Semiconductor
350.20 KB
Rf power field effect transistor.
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Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 4, 10/2006
RF Power Field Effect Transisto.
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