MRF6V2300N RF Power Field Effect Transistor

Motorola Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.4, 10/2006 RF Power Field Effect Transisto.

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Datasheet Specifications

Part number: MRF6V2300N
Manufacturer: Motorola Semiconductor
File Size: 350.20 KB
Datasheet: MRF6V2300N_MotorolaSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Excellent Thermal Stability
* Facilitates Manual Gain Control, ALC and Modulation Techniques
* 225°C Capable Plastic Package
* RoHS Compliant M

Applications

* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain
* 27 dB Drain Efficiency
* 68%
* Capable o

MRF6V2300N Distributors

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MRF6V2300N Power Field Effect Transistor Motorola Semiconductor

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