MRF6V3090NR1_MotorolaSemiconductor.pdf
Datasheet Details
Part number:
MRF6V3090NBR5, MRF6V3090NR1
Manufacturer:
Motorola Semiconductor
File Size:
963.01 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6V3090NBR5, MRF6V3090NR1.
Please refer to the document for exact specifications by model.
MRF6V3090NBR5, MRF6V3090NR1, RF Power Field Effect Transistors
22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi
Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev.
0, 4/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
Devices are suitable for use in broadcast applications.
Typical DVB T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal P
MRF6V3090NBR5 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Excellent Thermal Stability
* Greater Negative Gat
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