* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Excellent Thermal Stability
* Greater Negative Gat
MRF6V3090NBR1 Datasheet (963.01 KB)
MRF6V3090NBR1
Motorola Semiconductor
963.01 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N C.
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