MRF6V13250HSR3, MRF6V13250HR3 Datasheet - Freescale Semiconductor

MRF6V13250HSR3, MRF6V13250HR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev.
0, 6/2011 RF Power Field Effect Transistors N *Channel Enhancement<

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 20 V to 50 V for Extended Power Range
* Integrated ESD Protection

Applications

* operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications.
* Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB)
* 18 MRF6V13250HR3 MRF6V13250HS

MRF6V13250HR3_FreescaleSemiconductor.pdf