MRF6V2010NBR1 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev.1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode L.
95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF.

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Datasheet Specifications

Part number: MRF6V2010NBR1
Manufacturer: Freescale Semiconductor
File Size: 1.62 MB
Datasheet: MRF6V2010NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Integrated ESD Protection
* Excellent Thermal Stability
* Facilitates Manual Gain Control, ALC and Modulation Techniques
* 200°C Capable Plastic Package
* RoHS Compliant
* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Applications

* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain
* 23.9 dB Drain Efficiency
* 62%
* Capable o

MRF6V2010NBR1 Distributors

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MRF6V2010NBR1 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF6V2010NBR1-like datasheet