* Integrated ESD Protection
* Excellent Thermal Stability
* Facilitates Manual Gain Control, ALC and Modulation Techniques
* 200°C Capable Plastic Package
* RoHS Compliant
* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6V2010NBR1 Datasheet (1.62 MB)
MRF6V2010NBR1
Freescale Semiconductor
1.62 MB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode L.
📁 Related Datasheet
MRF6V2010NB RF Power FET (NXP)
MRF6V2010N RF Power FET (NXP)
MRF6V2010NR1 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V2010GN RF Power FET (NXP)
MRF6V2150N RF Power Field Effect Transistor (Motorola Semiconductor)
MRF6V2150NB RF Power Field Effect Transistor (Motorola Semiconductor)
MRF6V2150NBR1 RF Power FET (Freescale Semiconductor)
MRF6V2150NR1 RF Power FET (Freescale Semiconductor)
MRF6V2300N RF Power Field Effect Transistor (Motorola Semiconductor)
MRF6V2300NB RF Power Field Effect Transistor (Motorola Semiconductor)
