MRF6V2150NBR1, MRF6V2150NR1 Datasheet - Freescale Semiconductor

MRF6V2150NBR1 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain 25 dB Drain Efficiency 68.3%.

MRF6V2150NBR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per

MRF6V2150NR1_FreescaleSemiconductor.pdf

MRF6V2150NBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V2150NBR1, MRF6V2150NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6V2150NBR1, MRF6V2150NR1

Manufacturer:

Freescale Semiconductor

File Size:

1.52 MB

Description:

Rf power fet.

Note:

This datasheet PDF includes multiple part numbers: MRF6V2150NBR1, MRF6V2150NR1.
Please refer to the document for exact specifications by model.

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MRF6V2150NBR1 MRF6V2150NR1 Power FET Freescale Semiconductor

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