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MRF6V2300NB, MRF6V2300N - RF Power Field Effect Transistor

Motorola Semiconductor

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MRF6V2300NB Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V2300NB, MRF6V2300N. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	MRF6V2300NB, MRF6V2300N
Manufacturer	Motorola Semiconductor
File Size	350.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6V2300N_MotorolaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6V2300NB, MRF6V2300N. Please refer to the document for exact specifications by model.

MRF6V2300NB Product details

Features

Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Excellent Thermal Stability.
Facilitates Manual Gain Control, ALC and Modulation Techniques.
225°C Capable Plastic Package.
RoHS Compliant MRF6V2300N MRF6V2300NB.

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Published: Nov 14, 2006 |