MRF6V2300NR1 RF Power FET

NXP

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily.

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Datasheet Specifications

Part number: MRF6V2300NR1
Manufacturer: NXP ↗
File Size: 1.22 MB
Datasheet: MRF6V2300NR1-NXP.pdf
Description: RF Power FET

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per

Applications

* with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain
* 25.5 dB Drain Efficiency
* 68%
* Capab

MRF6V2300NR1 Distributors

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MRF6V2300NR1 Power FET NXP

NXP MRF6V2300NR1-like datasheet