MRF6V2010GN, MRF6V2010N Datasheet - NXP

Datasheet Details

Part number:

MRF6V2010GN, MRF6V2010N

Manufacturer:

NXP ↗

File Size:

1.42 MB

Description:

RF Power FET

Note:

This datasheet PDF includes multiple part numbers: MRF6V2010GN, MRF6V2010N.
Please refer to the document for exact specifications by model.

Features

* Characterized with series equivalent large

* signal impedance parameters

* Qualified up to a maximum of 50 VDD operation

* Integrated ESD protection

* 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10

* 450 M

MRF6V2010N-NXP.pdf

MRF6V2010GN Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V2010GN, MRF6V2010N. Please refer to the document for exact specifications by model.

MRF6V2010GN, MRF6V2010N, RF Power FET

NXP Semiconductors Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 450 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain 23.9 dB Drain efficiency 62% Capable of handlin

MRF6V2010GN Distributor

📁 Related Datasheet

MRF6V2010NBR1 MRF6V2010NR1 MRF6V2150N MRF6V2150NB MRF6V2150NBR1 MRF6V2150NR1

📌 All Tags

MRF6V2010N Power FET NXP

NXP MRF6V2010GN-like datasheet