Description
NXP Semiconductors Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily for .
Features
* Characterized with series equivalent large
* signal impedance parameters
* Qualified up to a maximum of 50 VDD operation
* Integrated ESD protection
* 225C capable plastic package
Document Number: MRF6V2010N Rev. 6, 9/2016
MRF6V2010N MRF6V2010NB MRF6V2010GN
10
* 450 M
Applications
* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W Power gain
* 23.9 dB Drain efficiency
* 62%
* Capable of handling 10:
