MRF6V2010GN, MRF6V2010N Datasheet - NXP

MRF6V2010GN RF Power FET

NXP Semiconductors Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain 23.9 dB Drain efficiency 62% Capable of handlin.

MRF6V2010GN Features

* Characterized with series equivalent large

* signal impedance parameters

* Qualified up to a maximum of 50 VDD operation

* Integrated ESD protection

* 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10

* 450 M

MRF6V2010N-NXP.pdf