* Characterized with series equivalent large
* signal impedance parameters
* Qualified up to a maximum of 50 VDD operation
* Integrated ESD protection
* 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10
* 450 M
MRF6V2010GN Datasheet (1.42 MB)
MRF6V2010GN
1.42 MB
Rf power fet.
NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed primarily for .
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