Datasheet Details
Part number:
MRF6V2150NR1
Manufacturer:
Freescale Semiconductor
File Size:
1.52 MB
Description:
RF Power FET
Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per
MRF6V2150NR1_FreescaleSemiconductor.pdf
MRF6V2150NR1, RF Power FET
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain 25 dB Drain Efficiency 68.3%
MRF6V2150NR1 Distributor
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