MRF6V2150NR1 RF Power FET

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field *Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed p.

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Datasheet Specifications

Part number: MRF6V2150NR1
Manufacturer: Freescale Semiconductor
File Size: 1.52 MB
Datasheet: MRF6V2150NR1_FreescaleSemiconductor.pdf
Description: RF Power FET

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per

Applications

* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain
* 25 dB Drain Efficiency
* 68.3%
* Capable

MRF6V2150NR1 Distributors

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MRF6V2150NR1 Power FET Freescale Semiconductor

Freescale Semiconductor MRF6V2150NR1-like datasheet