Description
Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev.0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channe.
5.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Oper
Applications
* operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg. ), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain
* 19.7 dB Dra
