MRF6V12500HSR3 - RF Power Field Effect Transistors
5.1 pF Chip Capacitors 33 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 2.2 μF, 100 V Chip Capacitors 22 μF, 25 V Chip Capacitor 1 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 56 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors Part Number ATC100B5R1CT500XT ATC100B330JT500XT GRM55DR
Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev.
0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz.
These devices are suitable for use in pulsed applications.
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10
MRF6V12500HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Oper
