MRF6V3090NR1 RF Power Field Effect Transistors

Motorola Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev.0, 4/2010 RF Power Field Effect Transistors N *C.
22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.

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Datasheet Specifications

Part number: MRF6V3090NR1
Manufacturer: Motorola Semiconductor
File Size: 963.01 KB
Datasheet: MRF6V3090NR1_MotorolaSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Excellent Thermal Stability
* Greater Negative Gat

Applications

* with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
* Typical DVB
* T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg. , f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain

MRF6V3090NR1 Distributors

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MRF6V3090NR1 Power Field Effect Transistors Motorola Semiconductor

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