MRF6V3090NR1 Datasheet - Motorola Semiconductor

MRF6V3090NR1 RF Power Field Effect Transistors

22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi.

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. Typical DVB T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal P.

MRF6V3090NR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Input Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Excellent Thermal Stability

* Greater Negative Gat

MRF6V3090NR1_MotorolaSemiconductor.pdf

MRF6V3090NR1 Datasheet Preview — Preview of MRF6V3090NR1 PDF

Datasheet Details

Part number:

MRF6V3090NR1

Manufacturer:

Motorola Semiconductor

File Size:

963.01 KB

Description:

Rf power field effect transistors.

MRF6V3090NR1 Distributor

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MRF6V3090NR1 MRF6V3090NR1 Power Field Effect Transistors Motorola Semiconductor