MRF6V3090NR1 Datasheet (Motorola Semiconductor) - RF Power Field Effect Transistors

MRF6V3090NR1, RF Power Field Effect Transistors

22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev.

0, 4/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

Devices are suitable for use in broadcast applications.

Typical DVB T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal P

MRF6V3090NR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Input Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Excellent Thermal Stability

* Greater Negative Gat