MRF6S9130HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S9130HSR3, MRF6S9130HR3
Manufacturer:
Freescale Semiconductor
File Size:
497.72 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S9130HSR3, MRF6S9130HR3.
Please refer to the document for exact specifications by model.
MRF6S9130HSR3, MRF6S9130HR3, RF Power Field Effect Transistors
Ferrite Beads, Short 47 pF Chip Capacitors 8.2 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitors, Gigatrim 12 pF Chip Capacitors 20 K pF Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 11 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 0.56 μF, 50 V Chip Capacito
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev.
4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot
MRF6S9130HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness
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