MRF6S9060NR1 RF Power Field Effect Transistors

NXP

Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1.Refer to Device Migration PCN1.

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Datasheet Specifications

Part number: MRF6S9060NR1
Manufacturer: NXP ↗
File Size: 841.97 KB
Datasheet: MRF6S9060NR1-NXP.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 225°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pou

MRF6S9060NR1 Distributors

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MRF6S9060NR1 Power Field Effect Transistors NXP

NXP MRF6S9060NR1-like datasheet