* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness
MRF6S9130HR3 Datasheet (497.72 KB)
MRF6S9130HR3
Freescale Semiconductor
497.72 KB
Rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channe.
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