MRF6S9130HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S9130HR3 Datasheet Preview — Preview of MRF6S9130HR3 PDF

Datasheet Details

Part number	MRF6S9130HR3
Manufacturer	Freescale Semiconductor
File Size	497.72 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S9130HR3_FreescaleSemiconductor.pdf

MRF6S9130HR3 Product details

Description

Ferrite Beads, Short 47 pF Chip Capacitors 8.2 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitors, Gigatrim 12 pF Chip Capacitors 20 K pF Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 11 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 0.56 μF, 50 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 12.5 nH Inductors Part Number 2743019447 100B470JP500X 100B8R2BP500X 27291SL 100B120JP500X 200B203KP50X T491D106K035AS 100B7R5JP500X 100B110JP500X 27271SL C1825C5

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage T.

📁 MRF6S9130HR3 Similar Datasheet

MRF6S9060MBR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060MR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060NBR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060NR1 - RF Power Field Effect Transistors (NXP)
MRF6S21140HR3 - RF Power FET (NXP)
MRF6S21140HSR3 - RF Power FET (NXP)
MRF604 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF607 - HIGH FREQUENCY TRANSISTOR (Motorola)

Other Datasheets by Freescale Semiconductor

MRF6S9130HSR3 - RF Power Field Effect Transistors
MRF6S9125MBR1 - RF Power Field Effect Transistors
MRF6S9125MR1 - RF Power Field Effect Transistors
MRF6S9125NBR1 - RF Power Field Effect Transistors
MRF6S9125NR1 - RF Power Field Effect Transistors
MRF6S9160HR3 - RF Power Field Effect Transistors

Published: Nov 27, 2006 |