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MRF6S21140HR3 Datasheet - NXP

MRF6S21140HR3 - RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN PCS/cellular radio and WLL applications.

Typical 2 carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 M

MRF6S21140HR3 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Optimized for Doherty Applications

* RoHS Compliant

MRF6S21140HR3-NXP.pdf

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Datasheet Details

Part number:

MRF6S21140HR3

Manufacturer:

NXP ↗

File Size:

876.77 KB

Description:

Rf power fet.

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