* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optimized for Doherty Applications
* RoHS Compliant
MRF6S21140HR3 Datasheet (876.77 KB)
MRF6S21140HR3
876.77 KB
Rf power fet.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed for W
.
📁 Related Datasheet
MRF6S21140HSR3 RF Power FET (NXP)
MRF6S21100HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100NR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21050LR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21050LSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S20010GNR1 RF Power Field Effect Transistors (Freescale Semiconductor)
