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MRF6S21140HR3 RF Power FET

MRF6S21140HR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for W .

MRF6S21140HR3 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection

MRF6S21140HR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical 2
* carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg.

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Power FET NXP
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