MRF6S21060NBR1 - RF Power Field Effect Transistors
Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA R2 10 kΩ, 1/4 W
LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN PCS/cellular radio, WLL and TD SCDMA applications.
Typical 2 Carrier W CDMA Perfor
MRF6S21060NBR1 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwid
