MRF6S21060NBR1 Datasheet - Freescale Semiconductor

MRF6S21060NBR1, RF Power Field Effect Transistors

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Datasheet Details

Part number:

MRF6S21060NBR1

Manufacturer:

Freescale Semiconductor

File Size:

1.33 MB

Description:

RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwid

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio, WLL and TD
* SCDMA applications.
* Typical 2
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pou

MRF6S21060NBR1 Distributors

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MRF6S21060NBR1 Power Field Effect Transistors Freescale Semiconductor

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