* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwid
MRF6S21060NBR1 Datasheet (1.33 MB)
MRF6S21060NBR1
Freescale Semiconductor
1.33 MB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhan.
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