MRF6S21060NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21060NBR1 Datasheet Preview — Preview of MRF6S21060NBR1 PDF

Datasheet Details

Part number	MRF6S21060NBR1
Manufacturer	Freescale Semiconductor
File Size	1.33 MB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21060NBR1_FreescaleSemiconductor.pdf

MRF6S21060NBR1 Product details

Description

Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S210

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Oct 19, 2006 |