MRF6S21100HSR3 - RF Power Field Effect Transistors
Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vi
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev.
7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,
MRF6S21100HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
