MRF6S21100HSR3, MRF6S21100HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21100HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21100HSR3, MRF6S21100HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MRF6S21100HSR3, MRF6S21100HR3
Manufacturer	Freescale Semiconductor
File Size	696.21 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21100HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S21100HSR3, MRF6S21100HR3. Please refer to the document for exact specifications by model.

MRF6S21100HSR3 Product details

Description

Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 3 R1 C1 B1 R2 C5 C8 C9 C10 C14 VGG C11 C2 C4 C6 C3 C12 VDD C13 C7 CUT OUT AREA 2.1 GHz NI780 Rev 4 Figure 2. MRF6S21

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 23, 2007 |