* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6S21100HSR3 Datasheet (696.21 KB)
MRF6S21100HSR3
Freescale Semiconductor
696.21 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF6S21100H Rev. 7, 1/2007
RF Power Field Effect Transistors
N - Chann.
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