MRF6S21100HR3 Datasheet - Freescale Semiconductor

MRF6S21100HR3, RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev.
7, 1/2007 RF Power Field Effect Transistors N - Chann

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg. ,

MRF6S21100HR3_FreescaleSemiconductor.pdf