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MRF6S21100HR3 Datasheet - Freescale Semiconductor

MRF6S21100HR3 RF Power Field Effect Transistors

Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vi.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,.

MRF6S21100HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

MRF6S21100HR3_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF6S21100HR3

Manufacturer:

Freescale Semiconductor

File Size:

696.21 KB

Description:

Rf power field effect transistors.

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MRF6S21100HR3 MRF6S21100HR3 Power Field Effect Transistors Freescale Semiconductor

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