MRF6S21100HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev.7, 1/2007 RF Power Field Effect Transistors N - Chann.
Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K0.

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Datasheet Specifications

Part number: MRF6S21100HR3
Manufacturer: Freescale Semiconductor
File Size: 696.21 KB
Datasheet: MRF6S21100HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg. ,

MRF6S21100HR3 Distributors

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MRF6S21140HR3 MRF6S21140HSR3 MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1

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MRF6S21100HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S21100HR3-like datasheet