MRF6S21100HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21100HR3 Datasheet Preview — Preview of MRF6S21100HR3 PDF

Datasheet Details

Part number	MRF6S21100HR3
Manufacturer	Freescale Semiconductor
File Size	696.21 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21100HR3_FreescaleSemiconductor.pdf

MRF6S21100HR3 Product details

Description

Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 3 R1 C1 B1 R2 C5 C8 C9 C10 C14 VGG C11 C2 C4 C6 C3 C12 VDD C13 C7 CUT OUT AREA 2.1 GHz NI780 Rev 4 Figure 2. MRF6S21

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 23, 2007 |