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MRF6S21100NBR1 Datasheet - Freescale Semiconductor

MRF6S21100NBR1 RF Power Field Effect Transistors

Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC600B8R2BT250XT CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Fair - Rite Kemet Kemet ATC Murata ATC ATC ATC ATC Vishay Vishay Vishay .
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ.

MRF6S21100NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

MRF6S21100NBR1_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF6S21100NBR1

Manufacturer:

Freescale Semiconductor

File Size:

882.80 KB

Description:

Rf power field effect transistors.

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MRF6S21100NBR1 MRF6S21100NBR1 Power Field Effect Transistors Freescale Semiconductor

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