MRF6S21100NBR1 Datasheet - Freescale Semiconductor

MRF6S21100NBR1, RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev.2, 1/2007 RF Power Field Effect Transistors N - Chann.
Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC6.

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Datasheet Details

Part number:

MRF6S21100NBR1

Manufacturer:

Freescale Semiconductor

File Size:

882.80 KB

Description:

RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg. , F

MRF6S21100NBR1 Distributors

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MRF6S21100NBR1 Power Field Effect Transistors Freescale Semiconductor

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