MRF6S21100NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21100NBR1 Datasheet Preview — Preview of MRF6S21100NBR1 PDF

Datasheet Details

Part number	MRF6S21100NBR1
Manufacturer	Freescale Semiconductor
File Size	882.80 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21100NBR1_FreescaleSemiconductor.pdf

MRF6S21100NBR1 Product details

Description

Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC600B8R2BT250XT CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Fair - Rite Kemet Kemet ATC Murata ATC ATC ATC ATC Vishay Vishay Vishay MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 3 B1 R3 R1 R2 C2 C1 C3 C4 C5 C6 C7 C8 CUT OUT AREA C9 C11 C12 MRF6S21100N/NB, Rev.3 C10 Figure 2. MRF6S21100NR1(NBR1) T

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 23, 2007 |