* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6S21100NBR1 Datasheet (882.80 KB)
MRF6S21100NBR1
Freescale Semiconductor
882.80 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev. 2, 1/2007
RF Power Field Effect Transistors
N - Chann.
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