MRF6S21100NBR1 - RF Power Field Effect Transistors
Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC600B8R2BT250XT CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Fair - Rite Kemet Kemet ATC Murata ATC ATC ATC ATC Vishay Vishay Vishay
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev.
2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ
MRF6S21100NBR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
