MRF6S21060NBR1
MRF6S21060NBR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
- 225_C Capable Plastic Package
- N Suffix Indicates Lead--Free Terminations. Ro HS pliant.
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21060N Rev. 5, 12/2008
MRF6S21060NR1 MRF6S21060NBR1
2110--2170 MHz, 14 W AVG., 28 V 2 x W--CDMA
LATERAL N--CHANNEL RF POWER MOSFETs
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
MRF6S21060NR1
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS VGS Tstg TC TJ
--0.5, +68 --0.5, +12 -- 65 to +150
150 225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case Case Temperature 79°C, 60 W CW Case Temperature 76°C, 14 W CW
RθJC
0.89 1.04
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf.
Select Documentation/Application Notes -- AN1955.
Unit Vdc Vdc °C °C °C
Unit °C/W
© Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved.
RF Device Data Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1...
