MRF6S21050LR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. - Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 m A, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 16 d B Drain Efficiency - 27.7% IM3 @ 10 MHz Offset - - 37 d Bc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset - - 40 d Bc @ 3.84 MHz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched, Controlled Q, for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - Low Gold Plating Thickness on Leads, 40µ″ Nominal. - In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF6S21050LR3 MRF6S21050LSR3 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 151...