MRF6S21050LSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF6S21050LSR3

MRF6S21050LSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S21050LSR3, a member of the MRF6S21050LR3 RF Power Field Effect Transistors family.

Description

Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi

Features

dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W.
CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3.
25.
30 RF Device Data Freescale Semiconductor DataSheet 4 U . com www. DataSheet4U. com.

Datasheet Details

Part number	MRF6S21050LSR3
Manufacturer	Freescale Semiconductor
File Size	582.26 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21050LSR3 Datasheet
Additional preview pages of the MRF6S21050LSR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.

Published: Oct 19, 2006 |