MRF6S9060MR1 Datasheet (NXP) - RF Power Field Effect Transistors

MRF6S9060MR1, RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1.

There are no form, fit or function changes with this part replacement.

N suffix added to part number to indicate transition to lead - free terminations.

RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices mak