* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6S21100NR1 Datasheet (882.80 KB)
MRF6S21100NR1
Freescale Semiconductor
882.80 KB
Rf power field effect transistors.
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev. 2, 1/2007
RF Power Field Effect Transistors
N - Chann.
📁 Related Datasheet
MRF6S21100NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21100HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21140HR3 RF Power FET (NXP)
MRF6S21140HSR3 RF Power FET (NXP)
MRF6S21050LR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21050LSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S21060NR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6S20010GNR1 RF Power Field Effect Transistors (Freescale Semiconductor)
