MRF6S21060NR1, MRF6S21060NBR1 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21060NR1 Description

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhan.
Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.

MRF6S21060NR1 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwid

MRF6S21060NR1 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio, WLL and TD
* SCDMA applications.
* Typical 2
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pou

📥 Download Datasheet

MRF6S21060NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S21060NR1, MRF6S21060NBR1
Manufacturer: Freescale Semiconductor
File Size: 1.33 MB
Datasheet: MRF6S21060NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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