MRF6S21060NR1, MRF6S21060NBR1 Datasheet - Freescale Semiconductor

MRF6S21060NR1 RF Power Field Effect Transistors

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LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio, WLL and TD SCDMA applications. Typical 2 Carrier W CDMA Perfor.

MRF6S21060NR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Designed for Lower Memory Effects and Wide Instantaneous Bandwid

MRF6S21060NBR1_FreescaleSemiconductor.pdf

MRF6S21060NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6S21060NR1, MRF6S21060NBR1

Manufacturer:

Freescale Semiconductor

File Size:

1.33 MB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1.
Please refer to the document for exact specifications by model.

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MRF6S21060NR1 MRF6S21060NBR1 Power Field Effect Transistors Freescale Semiconductor

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