MRF6S21060NR1, MRF6S21060NBR1 Datasheet - Freescale Semiconductor

MRF6S21060NR1, MRF6S21060NBR1, RF Power Field Effect Transistors

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhan.
Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.

datasheet Preview Page 1 from Datasheet4u.com

MRF6S21060NBR1_FreescaleSemiconductor.pdf

MRF6S21060NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6S21060NR1, MRF6S21060NBR1

Manufacturer:

Freescale Semiconductor

File Size:

1.33 MB

Description:

RF Power Field Effect Transistors

Note:

This datasheet PDF includes multiple part numbers: MRF6S21060NR1, MRF6S21060NBR1.
Please refer to the document for exact specifications by model.

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwid

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio, WLL and TD
* SCDMA applications.
* Typical 2
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pou

MRF6S21060NR1 Distributors

📁 Related Datasheet

MRF6S21140HR3 MRF6S21140HSR3 MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1

📌 All Tags

MRF6S21060NBR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S21060NR1-like datasheet