MRF6S18060MBR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S18060MR1, MRF6S18060MBR1
Manufacturer:
Freescale Semiconductor
File Size:
727.36 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S18060MR1, MRF6S18060MBR1.
Please refer to the document for exact specifications by model.
MRF6S18060MR1, MRF6S18060MBR1, RF Power Field Effect Transistors
6.8 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitor 1 pF 100B Chip Capacitors 10 μF Chip Capacitors (2220) 220 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number 100B6R8CW 100B1R5BW 100B1R8BW 100B1R0BW
Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1.
There are no form, fit or function changes with this part replacement.
N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF6S18060 Rev.
2, 5/2006 RF Power Field Effect Transistors www.datasheet4u.com MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and
MRF6S18060MR1 Features
* PECTRAL REGROWTH @ 600 kHz (dBc)
* 55
* 60
* 65 25_C
* 70
* 30_C
* 75
* 80
* 85 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz TC = 85_C Figure 11. Spectral Regrowth at 400 kHz versus Output Power
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