Datasheet Specifications
- Part number
- MRF6S18060NBR1
- Manufacturer
- Freescale Semiconductor
- File Size
- 837.87 KB
- Datasheet
- MRF6S18060NBR1_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .Features
* Characterized with Series Equivalent Large - Signal Impedance ParametersApplications
* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM ApplicationMRF6S18060NBR1 Distributors
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