MRF6S18060NBR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S18060NBR1, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.

Suitable for TDMA, CDMA, and multicarrier amplifier applications.

GSM Application Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain 15 dB Drain Efficiency - 50% GSM EDGE Application Typical GSM EDGE Performa

MRF6S18060NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* N Suffix Indicates Lead - Free