Datasheet4U Logo Datasheet4U.com

MRF6S18100NR1 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. .. MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain — 14.5 dB Drain Efficiency — 49% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S18100NBR1 RF Power Field Effect Transistors
MRF6S18140HR3 RF Power Field Effect Transistors
MRF6S18140HSR3 RF Power Field Effect Transistors
MRF6S18060MBR1 RF Power Field Effect Transistors
MRF6S18060MR1 RF Power Field Effect Transistors
MRF6S18060NBR1 RF Power Field Effect Transistors
MRF6S18060NR1 RF Power Field Effect Transistors
MRF6S19060NBR1 RF Power Field Effect Transistors
MRF6S19060NR1 RF Power Field Effect Transistors
MRF6S19100HR3 RF Power Field Effect Transistors

MRF6S18100NR1 Distributor