MRF6S18060MR1
MRF6S18060MR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF6S18060MBR1 comparator family.
- Part of the MRF6S18060MBR1 comparator family.
Freescale Semiconductor Technical Data
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead
- free terminations.
Document Number: MRF6S18060 Rev. 2, 5/2006
RF Power Field Effect Transistors
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MRF6S18060MR1 MRF6S18060MBR1
- 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N
- CHANNEL RF POWER MOSFETs
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
ARCHIVE INFORMATION
CASE 1486
- 03, STYLE 1 TO
- 270 WB
- 4 PLASTIC MRF6S18060MR1
CASE 1484
- 04, STYLE 1 TO
- 272 WB
- 4 PLASTIC MRF6S18060MBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate
- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value
- 0.5, +68
- 0.5, +12 216 1.2
- 65 to +175 200 Unit Vdc Vdc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 77°C, 25 W CW Symbol RθJC Value (1) 0.81 0.95 Unit °C/W
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