MRF6S18060NR1
MRF6S18060NR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF6S18060NBR1 comparator family.
- Part of the MRF6S18060NBR1 comparator family.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application
- Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 m A, Pout = 60 Watts
CW, f = 1990 MHz Power Gain
- 15 d B Drain Efficiency
- 50%
GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 m A,
Pout = 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz)
Power Gain
- 15.5 d B Spectral Regrowth @ 400 k Hz Offset =
- 62 d Bc Spectral Regrowth @ 600 k Hz Offset =
- 76 d Bc EVM
- 2% rms
- Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant.
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18060N Rev. 4, 12/2008
MRF6S18060NR1...
