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MRF6S18060MBR1 - RF Power Field Effect Transistors

General Description

6.8 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitor 1 pF 100B Chip Capacitors 10 μF Chip Capacitors (2220) 220 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number 100B6R8CW 100B1R5BW 100B1R8BW 100B1R0BW

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Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF6S18060 Rev. 2, 5/2006 RF Power Field Effect Transistors www.datasheet4u.com MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060MBR1 Table 1.