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MRF6S18060NBR1 - RF Power Field Effect Transistors

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S18060N Rev. 4, 12/2008 MRF6S18060NR1 MRF6S18060NBR1 1800- 2000 MHz, 60.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S18060NR1 RF Power Field Effect Transistors
MRF6S18060MBR1 RF Power Field Effect Transistors
MRF6S18060MR1 RF Power Field Effect Transistors
MRF6S18100NBR1 RF Power Field Effect Transistors
MRF6S18100NR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz) Power Gain — 15.