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MRF6S18140HSR3 - RF Power Field Effect Transistors

Download the MRF6S18140HSR3 datasheet PDF. This datasheet also covers the MRF6S18140HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 9.1 pF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 12 Ω, 1/8 W Resistors 1.0 KΩ, 1/8 W Resistors 560 KΩ, 1/8 W Chip Resistors Part Numb

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S18140HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S21140HR3 RF Power FET NXP
MRF6S21140HSR3 RF Power FET NXP
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
MRF6S9060MR1 RF Power Field Effect Transistors NXP
MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S18140HR3 RF Power Field Effect Transistors
MRF6S18100NBR1 RF Power Field Effect Transistors
MRF6S18100NR1 RF Power Field Effect Transistors
MRF6S18060MBR1 RF Power Field Effect Transistors
MRF6S18060MR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 36 dBc in 1.