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MRF6S18140HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L .. applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 36 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 50.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S18140HR3 RF Power Field Effect Transistors
MRF6S18100NBR1 RF Power Field Effect Transistors
MRF6S18100NR1 RF Power Field Effect Transistors
MRF6S18060MBR1 RF Power Field Effect Transistors
MRF6S18060MR1 RF Power Field Effect Transistors
MRF6S18060NBR1 RF Power Field Effect Transistors
MRF6S18060NR1 RF Power Field Effect Transistors
MRF6S19060NBR1 RF Power Field Effect Transistors
MRF6S19060NR1 RF Power Field Effect Transistors
MRF6S19100HR3 RF Power Field Effect Transistors

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