MRF6S18140HSR3 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRF6S18140HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S18140HSR3, a member of the MRF6S18140HR3 RF Power Field Effect Transistors family.

Datasheet Summary

Description

47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 9.1 pF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 12 Ω, 1/8 W Resistors 1.0 KΩ, 1/8 W Resistors 560 KΩ, 1/8 W Chip Resistors Part Numb

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

Datasheet Details

Part number	MRF6S18140HSR3
Manufacturer	Freescale Semiconductor
File Size	449.32 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S18140HSR3 Datasheet
Additional preview pages of the MRF6S18140HSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 36 dBc in 1.

Published: Jun 10, 2009 |