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MRF6S18100NBR1 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. .. MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain — 14.5 dB Drain Efficiency — 49% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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