MRF6S18100NBR1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. .. MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs GSM Application - Typical GSM Performance: VDD = 28 Volts, IDQ = 900 m A, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain - 14.5 d B Drain Efficiency - 49% GSM EDGE Application - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain - 15 d B Drain Efficiency - 35% Spectral Regrowth @ 400 k Hz Offset = - 63 d Bc Spectral Regrowth @ 600 k Hz Offset = - 76 d Bc EVM - 2% rms - Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - 200°C Capable Plastic...