MRF6S18100NBR1 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRF6S18100NBR1 - RF Power Field Effect Transistors

Datasheet Summary

Description

100 nF Chip Capacitor (1206) 6.8 pF 600B Chip Capacitors 4.7 μF Chip Capacitors (1812) 0.3 pF 700B Chip Capacitor 1.3 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kΩ, 1/4 W Chip Resistors (1206) 10 Ω, 1/4 W Chip Resistor (1206) Part Number 1206C104

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

Datasheet Details

Part number	MRF6S18100NBR1
Manufacturer	Freescale Semiconductor
File Size	744.16 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S18100NBR1 Datasheet
Additional preview pages of the MRF6S18100NBR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. www.datasheet4u.com MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain — 14.5 dB Drain Efficiency — 49% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg.

Published: Jun 10, 2009 |