MRF6S18140HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev.0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.

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Datasheet Specifications

Part number: MRF6S18140HR3
Manufacturer: Freescale Semiconductor
File Size: 449.32 KB
Datasheet: MRF6S18140HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E

Applications

* with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Vo

MRF6S18140HR3 Distributors

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MRF6S18140HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S18140HR3-like datasheet